Manufacturer Part Number: | TPN1110ENH,L1Q |
---|---|
Manufacturer: | Toshiba Semiconductor and Storage |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 9010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET N-CH 200V 7.2A 8TSON |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | TPN1110ENH,L1Q Datasheet |
Internal Part Number | 898-TPN1110ENH,L1Q | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
Packaging | Tape & Reel (TR) | |
Part Status | Active | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 200V | |
Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) | |
Rds On (Max) @ Id, Vgs | 114 mOhm @ 3.6A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 200µA | |
Gate Charge (Qg) @ Vgs | 7nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 600pF @ 100V | |
Power - Max | 39W | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | 8-PowerVDFN | |
Supplier Device Package | 8-TSON Advance | |
Standard Package | 5,000 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | TPN1110ENH,L1Q | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
TPN1110ENH,L1Q is in stock for immediate shipping now. We are the distributor of Toshiba Semiconductor and Storage all series components. The condition of TPN1110ENH,L1Q is new and unused, you can buy TPN1110ENH,L1Q Toshiba Semiconductor and Storage with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for TPN1110ENH,L1Q.
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