Manufacturer Part Number: | SPP42N03S2L13 |
---|---|
Manufacturer: | Infineon Technologies |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 9010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET N-CH 30V 42A TO-220AB |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | Obsolete / Discontinued |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | SPP42N03S2L13 Datasheet |
Internal Part Number | 898-SPP42N03S2L13 | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
PCN Obsolescence/ EOL | Multiple Devices 22/Feb/2008 | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ | |
Packaging | Tube | |
Part Status | Obsolete | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) | |
Rds On (Max) @ Id, Vgs | 12.9 mOhm @ 21A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 37µA | |
Gate Charge (Qg) @ Vgs | 30.5nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 1130pF @ 25V | |
Power - Max | 83W | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Package / Case | TO-220-3 | |
Supplier Device Package | PG-TO220-3-1 | |
Standard Package | 500 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | SPP42N03S2L13 | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
SPP42N03S2L13 is in stock for immediate shipping now. We are the distributor of Infineon Technologies all series components. The condition of SPP42N03S2L13 is new and unused, you can buy SPP42N03S2L13 Infineon Technologies with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for SPP42N03S2L13.
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