Manufacturer Part Number: | SI7958DP-T1-E3 |
---|---|
Manufacturer: | Vishay Siliconix |
Product Category: | Transistors - FETs, MOSFETs - Arrays |
Available Quantity: | 9010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET 2N-CH 40V 7.2A PPAK SO-8 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | Obsolete / Discontinued |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | SI7958DP-T1-E3 Datasheet |
Internal Part Number | 898-SI7958DP-T1-E3 | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
PCN Obsolescence/ EOL | PCN- SIL-0132015 Rev1 18/Feb/2015 | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Arrays | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
Packaging | Cut Tape (CT) | |
Part Status | Obsolete | |
FET Type | 2 N-Channel (Dual) | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 40V | |
Current - Continuous Drain (Id) @ 25°C | 7.2A | |
Rds On (Max) @ Id, Vgs | 16.5 mOhm @ 11.3A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) @ Vgs | 75nC @ 10V | |
Input Capacitance (Ciss) @ Vds | - | |
Power - Max | 1.4W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | PowerPAK® SO-8 Dual | |
Supplier Device Package | PowerPAK® SO-8 Dual | |
Standard Package | 1 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | SI7958DP-T1-E3 | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
SI7958DP-T1-E3 is in stock for immediate shipping now. We are the distributor of Vishay Siliconix all series components. The condition of SI7958DP-T1-E3 is new and unused, you can buy SI7958DP-T1-E3 Vishay Siliconix with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for SI7958DP-T1-E3.
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