Stocking distributor of Electronic Components
Email: [email protected]
| Manufacturer Part Number: | RN1110MFV,L3F |
|---|---|
| Manufacturer: | Toshiba Semiconductor and Storage |
| Product Category: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Available Quantity: | 9010 Pieces |
| Unit Price: | Quote by Email |
| Description: | TRANS PREBIAS NPN 0.15W VESM |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | RN1110MFV,L3F Datasheet |
| Internal Part Number | 898-RN1110MFV,L3F | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Active | |
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) (Ohms) | 4.7k | |
| Resistor - Emitter Base (R2) (Ohms) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Frequency - Transition | - | |
| Power - Max | 150mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-723 | |
| Supplier Device Package | VESM | |
| Standard Package | 8,000 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | RN1110MFV,L3F | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
RN1110MFV,L3F is in stock for immediate shipping now. We are the distributor of Toshiba Semiconductor and Storage all series components. The condition of RN1110MFV,L3F is new and unused, you can buy RN1110MFV,L3F Toshiba Semiconductor and Storage with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for RN1110MFV,L3F.
| GRM155D71A225ME15D | 2.2µF 10V Ceramic Capacitor X7T 0402 (1005 Metric) 0.039" L x 0.020" W (1.00mm x 0.50mm) | GRM155D71A225ME15D.pdf | |
| T491A226K006AT | 22µF Molded Tantalum Capacitors 6.3V 1206 (3216 Metric) 4 Ohm 0.126" L x 0.063" W (3.20mm x 1.60mm) | T491A226K006AT.pdf | |
| 0761657104 | IMPACT BP 3X10 GL/W SN | 0761657104.pdf | |
| 784774027 | 2.7µH Unshielded Wirewound Inductor 4A 45 mOhm Max Nonstandard | 784774027.pdf | |
| SP1812R-182H | 1.8µH Shielded Inductor 1.36A 110 mOhm Max Nonstandard | SP1812R-182H.pdf | |
| SN74CB3T16210DGGR | Bus Switch 10 x 1:1 48-TSSOP | SN74CB3T16210DGGR.pdf | |
| 71T75602S150BGI8 | IC SRAM 18MBIT 150MHZ 119BGA | 71T75602S150BGI8.pdf | |
| BQ24170RGYT | IC LI-ION/POL CHARGE MGMT 24VQFN | BQ24170RGYT.pdf | |
| MAX8668ETEP+T | Linear And Switching Voltage Regulator IC 4 Output Step-Down (Buck) Synchronous (2), Linear (LDO) (2) 1.5MHz 16-WFQFN Exposed Pad | MAX8668ETEP+T.pdf | |
| VI-JT3-MZ-F2 | CONVERTER MOD DC/DC 24V 25W | VI-JT3-MZ-F2.pdf | |
| ACC70DRSD-S288 | CONN EDGECARD 140POS .100" | ACC70DRSD-S288.pdf | |
| SJS991000 | CRADLE W/TAPE WHITE SIZE 10 | SJS991000.pdf | |
| RJHSEG38F | Jack Modular Connector 8p8c (RJ45, Ethernet) Shielded | RJHSEG38F.pdf | |
| 1969920 | 9 Position Terminal Block Header, Female Sockets 0.400" (10.16mm) 90°, Right Angle, Under Board Through Hole | 1969920.pdf |