| Manufacturer Part Number: | RN1106ACT(TPL3) |
|---|---|
| Manufacturer: | Toshiba Semiconductor and Storage |
| Product Category: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Available Quantity: | 19010 Pieces |
| Unit Price: | Quote by Email |
| Description: | TRANS PREBIAS NPN 0.1W CST3 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | RN1106ACT(TPL3) Datasheet |
| Internal Part Number | 898-RN1106ACT(TPL3) | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Online Catalog | NPN Pre-biased Transistors | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Last Time Buy | |
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 80mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) (Ohms) | 4.7k | |
| Resistor - Emitter Base (R2) (Ohms) | 47k | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA | |
| Current - Collector Cutoff (Max) | 500nA | |
| Frequency - Transition | - | |
| Power - Max | 100mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-101, SOT-883 | |
| Supplier Device Package | CST3 | |
| Standard Package | 10,000 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | RN1106ACT(TPL3) | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
RN1106ACT(TPL3) is in stock for immediate shipping now. We are the distributor of Toshiba Semiconductor and Storage all series components. The condition of RN1106ACT(TPL3) is new and unused, you can buy RN1106ACT(TPL3) Toshiba Semiconductor and Storage with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for RN1106ACT(TPL3).
| UUQ1A100MCL1GB | 10µF 10V Aluminum Capacitors Radial, Can - SMD 1000 Hrs @ 105°C | UUQ1A100MCL1GB.pdf | |
| 100YXJ22MT16.3X11 | 22µF 100V Aluminum Capacitors Radial, Can 7000 Hrs @ 105°C | 100YXJ22MT16.3X11.pdf | |
| VJ1812Y184KBBAT4X | 0.18µF 100V Ceramic Capacitor X7R 1812 (4532 Metric) 0.183" L x 0.126" W (4.65mm x 3.20mm) | VJ1812Y184KBBAT4X.pdf | |
| GRM2166R1H121JZ01D | 120pF 50V Ceramic Capacitor R2H 0805 (2012 Metric) 0.079" L x 0.049" W (2.00mm x 1.25mm) | GRM2166R1H121JZ01D.pdf | |
| SMD2920P200TSA/24 | FUSE RESET 2.00A 24V 2920 SMD | SMD2920P200TSA/24.pdf | |
| MMBZ10VAL,215 | TVS DIODE 6.5VWM 14.2VC SOT23 | MMBZ10VAL,215.pdf | |
| SIT8008AIB8-28E | 1MHz ~ 110MHz HCMOS, LVCMOS MEMS (Silicon) Programmable Oscillator Surface Mount 2.8V 4.5mA Enable/Disable | SIT8008AIB8-28E.pdf | |
| 2474R-35K | 680µH Unshielded Molded Inductor 490mA 1.5 Ohm Max Axial | 2474R-35K.pdf | |
| N05DB2R2M | 2.2µH Unshielded Inductor 2.9A 32 mOhm Max Nonstandard | N05DB2R2M.pdf | |
| MAX16990ATCD/V+T | Boost, SEPIC Regulator Positive Output Step-Up, Step-Up/Step-Down DC-DC Controller IC 12-TQFN (3x3) | MAX16990ATCD/V+T.pdf | |
| RG3216P-1801-B-T1 | RES SMD 1.8K OHM 0.1% 1/4W 1206 | RG3216P-1801-B-T1.pdf | |
| 43-00097 | 5 Position Circular Connector Plug, Female Sockets Screw Gold | 43-00097.pdf | |
| 0521510910 | 9 Position Receptacle Connector White Poke-In 26 AWG Through Hole, Right Angle, Press-Fit | 0521510910.pdf | |
| 20021611-00040T1LF | 40 Positions Header, Shrouded Connector 0.050" (1.27mm) Through Hole Gold | 20021611-00040T1LF.pdf | |
| RPC2512JT1K20 | RES SMD 1.2K OHM 5% 1.5W 2512 | RPC2512JT1K20.pdf |