| Manufacturer Part Number: | IXFX150N30P3 | 
|---|---|
| Manufacturer: | IXYS | 
| Product Category: | Transistors - FETs, MOSFETs - Single | 
| Available Quantity: | 9070 Pieces | 
| Unit Price: | Quote by Email | 
| Description: | MOSFET N-CH 300V 150A TO-247 | 
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant | 
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) | 
| Production Status (Lifecycle): | In Production | 
| Delivery Time: | 1-2 Days | 
| Date Code (D/C): | New | 
| Datasheet Download: | IXFX150N30P3 Datasheet | 
| Internal Part Number | 898-IXFX150N30P3 | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Online Catalog | N-Channel Standard FETs | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | IXYS | |
| Series | HiPerFET™, Polar3™ | |
| Packaging | Tube | |
| Part Status | Active | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 300V | |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) | |
| Rds On (Max) @ Id, Vgs | 19 mOhm @ 75A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 8mA | |
| Gate Charge (Qg) @ Vgs | 197nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 12100pF @ 25V | |
| Power - Max | 1300W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | PLUS247™-3 | |
| Standard Package | 30 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | IXFX150N30P3 | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
IXFX150N30P3 is in stock for immediate shipping now. We are the distributor of IXYS all series components. The condition of IXFX150N30P3 is new and unused, you can buy IXFX150N30P3 IXYS with us at a very low price and quick delivery. 
Please kindly send us an email if you have any demands for IXFX150N30P3.
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