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IRFS4228PBF

IRFS4228PBF
Manufacturer Part Number:IRFS4228PBF
Manufacturer:
Product Category:Transistors - FETs, MOSFETs - Single
Available Quantity:10964 Pieces
Unit Price:Quote by Email
Description:MOSFET N-CH 150V 83A D2PAK
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL):1 (Unlimited)
Production Status (Lifecycle):In Production
Delivery Time:1-2 Days
Date Code (D/C):New
Datasheet Download: IRFS4228PBF Datasheet
IRFS4228PBF´s Parameters
Internal Part Number898-IRFS4228PBF
Manufacturer Lead time6-8 weeks
ConditionNew & Unused, Original Sealed
Product Training ModulesHigh Voltage Integrated Circuits (HVIC Gate Drivers)
Design ResourcesIRFB4228PBF Saber Model
IRFB4228PBF Spice Model
PCN Obsolescence/ EOLMultiple Devices 25/Apr/2014
PCN Design/SpecificationMaterial Chg 24/Nov/2015
PCN Assembly/OriginMosfet Backend Wafer Processing 23/Oct/2013
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
SeriesHEXFET®
PackagingTube
Part StatusObsolete
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C83A (Tc)
Rds On (Max) @ Id, Vgs15 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) @ Vgs107nC @ 10V
Input Capacitance (Ciss) @ Vds4530pF @ 25V
Power - Max330W
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK
Standard Package 50
Weight0.001 KG
ApplicationEmail for details
Replacement PartIRFS4228PBF
Country of OriginUSA / JAPAN / Philippines / Malaysia
MOQ1 Piece
Picture / Image / PhotoSend via email

IRFS4228PBF is in stock for immediate shipping now. We are the distributor of Infineon Technologies all series components. The condition of IRFS4228PBF is new and unused, you can buy IRFS4228PBF Infineon Technologies with us at a very low price and quick delivery.

Please kindly send us an email if you have any demands for IRFS4228PBF.

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