Manufacturer Part Number: | IRFD224PBF |
---|---|
Manufacturer: | Vishay Siliconix |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 9010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET N-CH 250V 630MA 4-DIP |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | IRFD224PBF Datasheet |
Internal Part Number | 898-IRFD224PBF | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Video File | MOSFET Technologies for Power Conversion | |
Online Catalog | N-Channel Standard FETs | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | - | |
Packaging | Tube | |
Part Status | Active | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 250V | |
Current - Continuous Drain (Id) @ 25°C | 630mA (Ta) | |
Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 380mA, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) @ Vgs | 14nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 260pF @ 25V | |
Power - Max | 1W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Package / Case | 4-DIP (0.300", 7.62mm) | |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP | |
Standard Package | 2,500 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | IRFD224PBF | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
IRFD224PBF is in stock for immediate shipping now. We are the distributor of Vishay Siliconix all series components. The condition of IRFD224PBF is new and unused, you can buy IRFD224PBF Vishay Siliconix with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for IRFD224PBF.
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