Manufacturer Part Number: | IRF7807ATR |
---|---|
Manufacturer: | Infineon Technologies |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 9010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET N-CH 30V 8.3A 8-SOIC |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | Obsolete / Discontinued |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | IRF7807ATR Datasheet |
Internal Part Number | 898-IRF7807ATR | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Product Training Modules | Discrete Power MOSFETs 40V and Below | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | HEXFET® | |
Packaging | Tape & Reel (TR) | |
Part Status | Obsolete | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) | |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 7A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) @ Vgs | 17nC @ 5V | |
Input Capacitance (Ciss) @ Vds | - | |
Power - Max | 2.5W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Supplier Device Package | 8-SO | |
Standard Package | 4,000 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | IRF7807ATR | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
IRF7807ATR is in stock for immediate shipping now. We are the distributor of Infineon Technologies all series components. The condition of IRF7807ATR is new and unused, you can buy IRF7807ATR Infineon Technologies with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for IRF7807ATR.
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