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IRF640NSPBF

IRF640NSPBF
Manufacturer Part Number:IRF640NSPBF
Manufacturer:
Product Category:Transistors - FETs, MOSFETs - Single
Available Quantity:9800 Pieces
Unit Price:Quote by Email
Description:MOSFET N-CH 200V 18A D2PAK
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL):1 (Unlimited)
Production Status (Lifecycle):In Production
Delivery Time:1-2 Days
Date Code (D/C):New
Datasheet Download: IRF640NSPBF Datasheet
IRF640NSPBF´s Parameters
Internal Part Number898-IRF640NSPBF
Manufacturer Lead time6-8 weeks
ConditionNew & Unused, Original Sealed
Product Training ModulesHigh Voltage Integrated Circuits (HVIC Gate Drivers)
Design ResourcesIRF640NSPBF Saber Model
IRF640NSPBF Spice Model
PCN Design/SpecificationCopper Plating Update 31/Aug/2015
Material Chg 24/Nov/2015
PCN Assembly/OriginAlternate Assembly Site 11/Nov/2013
PCN PackagingPackage Drawing Update 19/Aug/2015
Online Catalog N-Channel Standard FETs
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
SeriesHEXFET®
PackagingTube
Part StatusNot For New Designs
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs150 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs67nC @ 10V
Input Capacitance (Ciss) @ Vds1160pF @ 25V
Power - Max150W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK
Standard Package 50
Weight0.001 KG
ApplicationEmail for details
Replacement PartIRF640NSPBF
Country of OriginUSA / JAPAN / Philippines / Malaysia
MOQ1 Piece
Picture / Image / PhotoSend via email

IRF640NSPBF is in stock for immediate shipping now. We are the distributor of Infineon Technologies all series components. The condition of IRF640NSPBF is new and unused, you can buy IRF640NSPBF Infineon Technologies with us at a very low price and quick delivery.

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