Manufacturer Part Number: | IPP65R074C6XKSA1 |
---|---|
Manufacturer: | Infineon Technologies |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 10094 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET N-CH 650V 57.7A TO220 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | IPP65R074C6XKSA1 Datasheet |
Internal Part Number | 898-IPP65R074C6XKSA1 | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Online Catalog | N-Channel Standard FETs | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | CoolMOS™ | |
Packaging | Tube | |
Part Status | Active | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 650V | |
Current - Continuous Drain (Id) @ 25°C | 57.7A (Tc) | |
Rds On (Max) @ Id, Vgs | 74 mOhm @ 13.9A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 1.4mA | |
Gate Charge (Qg) @ Vgs | 17nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 3020pF @ 100V | |
Power - Max | 480.8W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Package / Case | TO-220-3 | |
Supplier Device Package | PG-TO220-3 | |
Standard Package | 500 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | IPP65R074C6XKSA1 | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
IPP65R074C6XKSA1 is in stock for immediate shipping now. We are the distributor of Infineon Technologies all series components. The condition of IPP65R074C6XKSA1 is new and unused, you can buy IPP65R074C6XKSA1 Infineon Technologies with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for IPP65R074C6XKSA1.
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