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IPD26N06S2L35ATMA1

IPD26N06S2L35ATMA1
Manufacturer Part Number:IPD26N06S2L35ATMA1
Manufacturer:
Product Category:Transistors - FETs, MOSFETs - Single
Available Quantity:9010 Pieces
Unit Price:Quote by Email
Description:MOSFET N-CH 55V 30A TO252-3
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL):1 (Unlimited)
Production Status (Lifecycle):In Production
Delivery Time:1-2 Days
Date Code (D/C):New
Datasheet Download: IPD26N06S2L35ATMA1 Datasheet
IPD26N06S2L35ATMA1´s Parameters
Internal Part Number898-IPD26N06S2L35ATMA1
Manufacturer Lead time6-8 weeks
ConditionNew & Unused, Original Sealed
PCN Assembly/OriginWafer Fab/Test Site Addition 16/Oct/2014
Wafer Fab/Test Site Addition 15/Dec/2014
PCN PackagingCover Tape Width Update 17/Jun/2015
Cover Tape Width Cancellation 14/Jul/2015
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingTape & Reel (TR)
Part StatusNot Available
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs35 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id2V @ 26µA
Gate Charge (Qg) @ Vgs24nC @ 10V
Input Capacitance (Ciss) @ Vds621pF @ 25V
Power - Max68W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
Standard Package 2,500
Weight0.001 KG
ApplicationEmail for details
Replacement PartIPD26N06S2L35ATMA1
Country of OriginUSA / JAPAN / Philippines / Malaysia
MOQ1 Piece
Picture / Image / PhotoSend via email

IPD26N06S2L35ATMA1 is in stock for immediate shipping now. We are the distributor of Infineon Technologies all series components. The condition of IPD26N06S2L35ATMA1 is new and unused, you can buy IPD26N06S2L35ATMA1 Infineon Technologies with us at a very low price and quick delivery.

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