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| Manufacturer Part Number: | HUF75337P3 |
|---|---|
| Manufacturer: | Fairchild Semiconductor |
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Available Quantity: | 9010 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET N-CH 55V 75A TO-220AB |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | Obsolete / Discontinued |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | HUF75337P3 Datasheet |
| Internal Part Number | 898-HUF75337P3 | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Fairchild Semiconductor | |
| Series | UltraFET™ | |
| Packaging | Tube | |
| Part Status | Obsolete | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) | |
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 75A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 109nC @ 20V | |
| Input Capacitance (Ciss) @ Vds | 1775pF @ 25V | |
| Power - Max | 175W | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220AB | |
| Standard Package | 400 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | HUF75337P3 | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
HUF75337P3 is in stock for immediate shipping now. We are the distributor of Fairchild Semiconductor all series components. The condition of HUF75337P3 is new and unused, you can buy HUF75337P3 Fairchild Semiconductor with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for HUF75337P3.
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