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| Manufacturer Part Number: | EPC2110ENGRT |
|---|---|
| Manufacturer: | EPC |
| Product Category: | Transistors - FETs, MOSFETs - Arrays |
| Available Quantity: | 9010 Pieces |
| Unit Price: | Quote by Email |
| Description: | TRANS GAN 2N-CH 120V BUMPED DIE |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | EPC2110ENGRT Datasheet |
| Internal Part Number | 898-EPC2110ENGRT | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Online Catalog | N-Channel Logic Level Gate FETs | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | EPC | |
| Series | eGaN® | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | 2 N-Channel (Dual) Common Drain | |
| FET Feature | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 120V | |
| Current - Continuous Drain (Id) @ 25°C | 3.4A | |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 4A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 700µA | |
| Gate Charge (Qg) @ Vgs | 0.8nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 80pF @ 60V | |
| Power - Max | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die | |
| Standard Package | 1,000 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | EPC2110ENGRT | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
EPC2110ENGRT is in stock for immediate shipping now. We are the distributor of EPC all series components. The condition of EPC2110ENGRT is new and unused, you can buy EPC2110ENGRT EPC with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for EPC2110ENGRT.
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