| Manufacturer Part Number: | APT45GP120B2DQ2G |
|---|---|
| Manufacturer: | Microsemi Corporation |
| Product Category: | Transistors - IGBTs - Single |
| Available Quantity: | 9100 Pieces |
| Unit Price: | Quote by Email |
| Description: | IGBT PT 1200V 113A 625W Through Hole |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | APT45GP120B2DQ2G Datasheet |
| Internal Part Number | 898-APT45GP120B2DQ2G | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Online Catalog | Standard IGBTs | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - IGBTs - Single | |
| Manufacturer | Microsemi Corporation | |
| Series | POWER MOS 7® | |
| Packaging | Tube | |
| Part Status | Active | |
| IGBT Type | PT | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Current - Collector (Ic) (Max) | 113A | |
| Current - Collector Pulsed (Icm) | 170A | |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 45A | |
| Power - Max | 625W | |
| Switching Energy | 900µJ (on), 905µJ (off) | |
| Input Type | Standard | |
| Gate Charge | 185nC | |
| Td (on/off) @ 25°C | 18ns/100ns | |
| Test Condition | 600V, 45A, 5 Ohm, 15V | |
| Reverse Recovery Time (trr) | - | |
| Package / Case | TO-247-3 Variant | |
| Mounting Type | Through Hole | |
| Supplier Device Package | * | |
| Standard Package | 30 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | APT45GP120B2DQ2G | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
APT45GP120B2DQ2G is in stock for immediate shipping now. We are the distributor of Microsemi Corporation all series components. The condition of APT45GP120B2DQ2G is new and unused, you can buy APT45GP120B2DQ2G Microsemi Corporation with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for APT45GP120B2DQ2G.
| 12105C475KAT2A | 4.7µF 50V Ceramic Capacitor X7R 1210 (3225 Metric) 0.126" L x 0.098" W (3.20mm x 2.50mm) | 12105C475KAT2A.pdf | |
| C4532X7R3A103M200KA | 10000pF 1000V (1kV) Ceramic Capacitor X7R 1812 (4532 Metric) 0.177" L x 0.126" W (4.50mm x 3.20mm) | C4532X7R3A103M200KA.pdf | |
| 08053C103JAT4A | 10000pF 25V Ceramic Capacitor X7R 0805 (2012 Metric) 0.079" L x 0.049" W (2.01mm x 1.25mm) | 08053C103JAT4A.pdf | |
| VJ0805D1R6DLXAJ | 1.6pF 25V Ceramic Capacitor C0G, NP0 0805 (2012 Metric) 0.079" L x 0.049" W (2.00mm x 1.25mm) | VJ0805D1R6DLXAJ.pdf | |
| MXLCE64AE3 | TVS DIODE 64VWM 103VC CASE1 | MXLCE64AE3.pdf | |
| GEM18DRXH | CONN EDGECARD 36POS DIP .156 SLD | GEM18DRXH.pdf | |
| EBM18DCCN | CONN EDGECARD 36POS R/A .156 SLD | EBM18DCCN.pdf | |
| BLF8G27LS-150GVQ | RF Mosfet LDMOS 28V 1.3A 2.6GHz ~ 2.7GHz 18dB 45W CDFM6 | BLF8G27LS-150GVQ.pdf | |
| ETQ-P5M101YGC | 97µH Shielded Wirewound Inductor 2.7A 229 mOhm Max Nonstandard | ETQ-P5M101YGC.pdf | |
| VNB14N0413TR | MOSFET OMNI N-CH 42V 14A D2PAK | VNB14N0413TR.pdf | |
| EL817S(B)(TA)-V | Optoisolator Transistor Output 5000Vrms 1 Channel 4-SMD | EL817S(B)(TA)-V.pdf | |
| A-TB750-OQ13CH | 13 Position Terminal Block Header, Male Pins, Shrouded (4 Side) 0.295" (7.50mm) 90°, Right Angle Through Hole | A-TB750-OQ13CH.pdf | |
| YQ16615000J0G | 8 Position Wire to Board Terminal Block Horizontal with Board 0.150" (3.81mm) Through Hole | YQ16615000J0G.pdf | |
| 737015-3 | 0.250" (6.35mm) Quick Connect Female 10-11.5 AWG Crimp Connector Non-Insulated | 737015-3.pdf | |
| 9C12063A4R22FGHFT | RES SMD 4.22 OHM 1% 1/4W 1206 | 9C12063A4R22FGHFT.pdf |