Manufacturer Part Number: | 1N8026-GA |
---|---|
Manufacturer: | GeneSiC Semiconductor |
Product Category: | Diodes - Rectifiers - Single |
Available Quantity: | 9011 Pieces |
Unit Price: | Quote by Email |
Description: | DIODE SILICON 1.2KV 8A TO257 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | 1N8026-GA Datasheet |
Internal Part Number | 898-1N8026-GA | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Online Catalog | Silicon Carbide Power Schottky Diode | |
Category | Discrete Semiconductor Products | |
Family | Diodes - Rectifiers - Single | |
Manufacturer | GeneSiC Semiconductor | |
Series | - | |
Packaging | Tube | |
Part Status | Active | |
Diode Type | Silicon Carbide Schottky | |
Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) | |
Current - Average Rectified (Io) | 8A (DC) | |
Voltage - Forward (Vf) (Max) @ If | 1.6V @ 2.5A | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0ns | |
Current - Reverse Leakage @ Vr | 10µA @ 1200V | |
Capacitance @ Vr, F | 237pF @ 1V, 1MHz | |
Mounting Type | Through Hole | |
Package / Case | TO-257-3 | |
Supplier Device Package | TO-257 | |
Operating Temperature - Junction | -55°C ~ 250°C | |
Standard Package | 10 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | 1N8026-GA | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
1N8026-GA is in stock for immediate shipping now. We are the distributor of GeneSiC Semiconductor all series components. The condition of 1N8026-GA is new and unused, you can buy 1N8026-GA GeneSiC Semiconductor with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for 1N8026-GA.
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