Stocking distributor of Electronic Components
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| Manufacturer Part Number: | 1N6625E3 |
|---|---|
| Manufacturer: | Microsemi Corporation |
| Product Category: | Diodes - Rectifiers - Single |
| Available Quantity: | 9031 Pieces |
| Unit Price: | Quote by Email |
| Description: | DIODE GEN PURP 1.1KV 1A AXIAL |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | 1N6625E3 Datasheet |
| Internal Part Number | 898-1N6625E3 | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Online Catalog | Standard Diode | |
| Category | Discrete Semiconductor Products | |
| Family | Diodes - Rectifiers - Single | |
| Manufacturer | Microsemi Corporation | |
| Series | - | |
| Packaging | Bulk | |
| Part Status | Active | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 1100V (1.1kV) | |
| Current - Average Rectified (Io) | 1A | |
| Voltage - Forward (Vf) (Max) @ If | 1.95V @ 1.5A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 80ns | |
| Current - Reverse Leakage @ Vr | 1µA @ 1000V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Through Hole | |
| Package / Case | A, Axial | |
| Supplier Device Package | A, Axial | |
| Operating Temperature - Junction | -65°C ~ 150°C | |
| Standard Package | 1 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | 1N6625E3 | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
1N6625E3 is in stock for immediate shipping now. We are the distributor of Microsemi Corporation all series components. The condition of 1N6625E3 is new and unused, you can buy 1N6625E3 Microsemi Corporation with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for 1N6625E3.
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